5N SIO2 application on semiconductor
- Silicon substrate manufacturing: High purity SiO₂ is crucial in the production of semiconductor devices, all silicon substrate need a good insulation layer, dielectric constant is 3.9, it can have a withstand voltage 100v/100 nm.
- Insulation: SiO₂ is primarily used as an insulating layer in siliconsubstrates.
- Dielectric Material:
- Structural Layer: SiO₂ can also act as a layer in micromachining processes. essential for the development of (MEMS) and integrated circuits (ICs)
- Silicon manufacturing process: High purity SiO₂ use in CMOS, MOSFET, as insulation layer.
- Thermal Oxidation: The most common method for forming SiO₂ on silicon wafers is through thermal oxidation at elevated temperatures (typically between 900°C and 1300°C). The silicon reacts with oxygen to form a thin layer of silicon dioxide on the wafer surface.
- Types of Oxidation:
- Dry Oxidation: Involves the use of pure oxygen,
- Wet Oxidation:
- Deposition Techniques: CVD, ALD, PVD
- Etching and Patterning:
- Gate Oxide Formation: In MOSFET fabrication, the SiO₂ layer acts as the gate oxide.